The Japan Society of Applied Physics

[PS-3-28] Impact of ZrO2 on Electron Trapping Behavior in 28 nm HKMG nMOSFETs by Low-Frequency (1/f) Noise and RTN Analysis

S. C. Tsai1、S. L. Wu2、C. Y. Wu3、C. W. Huang4、Y. Y. Lu5、B. C. Wang6、S. J. Chang7、J. F. Chen8、P. C. Huang9 (1.Univ. of NCKU、2.Univ. of CSU、3.Univ. of CSU、4.Univ. of CSU、5.Univ. of CSU、6.Univ. of NCKU、7.Univ. of NCKU、8.Univ. of NCKU、9.Univ. of NCKU , Taiwan)

https://doi.org/10.7567/SSDM.2012.PS-3-28