[PS-3-28] Impact of ZrO2 on Electron Trapping Behavior in 28 nm HKMG nMOSFETs by Low-Frequency (1/f) Noise and RTN Analysis

S. C. Tsai¹, S. L. Wu², C. Y. Wu³, C. W. Huang⁴, Y. Y. Lu⁵, B. C. Wang⁶, S. J. Chang⁷, J. F. Chen⁸, P. C. Huang⁹ (1.Univ. of NCKU, 2.Univ. of CSU, 3.Univ. of CSU, 4.Univ. of CSU, 5.Univ. of CSU, 6.Univ. of NCKU, 7.Univ. of NCKU, 8.Univ. of NCKU, 9.Univ. of NCKU , Taiwan)

https://doi.org/10.7567/SSDM.2012.PS-3-28