[PS-3-28] Impact of ZrO2 on Electron Trapping Behavior in 28 nm HKMG nMOSFETs by Low-Frequency (1/f) Noise and RTN Analysis

S. C. Tsai¹、S. L. Wu²、C. Y. Wu³、C. W. Huang⁴、Y. Y. Lu⁵、B. C. Wang⁶、S. J. Chang⁷、J. F. Chen⁸、P. C. Huang⁹ (1.Univ. of NCKU、2.Univ. of CSU、3.Univ. of CSU、4.Univ. of CSU、5.Univ. of CSU、6.Univ. of NCKU、7.Univ. of NCKU、8.Univ. of NCKU、9.Univ. of NCKU , Taiwan)

https://doi.org/10.7567/SSDM.2012.PS-3-28