High-performance Short-channel Germanium nMOSFETs without Phosphorus Diffusion in n+/p Source/Drain Junctions

C. T. Chung; G. L. Luo; B. Y. Chen; C. W. Chen; W. C. Chen; C. H. Chien

doi:https://doi.org/10.7567/SSDM.2012.PS-3-8

2012 International Conference on Solid State Devices and Materials

Sep 25, 2012 - Sep 27, 2012
Kyoto International Conference Center, Kyoto, Japan

[PS-3-8] High-performance Short-channel Germanium nMOSFETs without Phosphorus Diffusion in n+/p Source/Drain Junctions

C. T. Chung¹, G. L. Luo², B. Y. Chen², C. W. Chen¹, W. C. Chen¹, C. H. Chien^1,2 (1.National Chiao-Tung Univ., 2.National Nano Device Laboratories , Taiwan)

https://doi.org/10.7567/SSDM.2012.PS-3-8

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