High-performance Short-channel Germanium nMOSFETs without Phosphorus Diffusion in n+/p Source/Drain Junctions

C. T. Chung; G. L. Luo; B. Y. Chen; C. W. Chen; W. C. Chen; C. H. Chien

doi:https://doi.org/10.7567/SSDM.2012.PS-3-8

2012 International Conference on Solid State Devices and Materials

2012年9月25日〜 2012年9月27日
Kyoto International Conference Center, Kyoto, Japan

[PS-3-8] High-performance Short-channel Germanium nMOSFETs without Phosphorus Diffusion in n+/p Source/Drain Junctions

C. T. Chung¹、G. L. Luo²、B. Y. Chen²、C. W. Chen¹、W. C. Chen¹、C. H. Chien^1,2 (1.National Chiao-Tung Univ.、2.National Nano Device Laboratories , Taiwan)

https://doi.org/10.7567/SSDM.2012.PS-3-8

▲