[PS-4-1] Effects of Rapid-Thermal Annealing on Resistive Switching of ZnO/Ti/ZnO RRAM Deposited on Flexible PEN Substrate

C. L. Lin¹, Y. H. Lai¹, S. R. Yang¹, Y. H. Yang¹, C. M. Wu¹, C. H. Soh¹, T. Y. Lin¹, C. F. Sung², P. C. Juan³ (1.Feng Chia Univ., 2.Indus. Tech. Res. Inst. (ITRI), 3.Mingchi Univ. of Tech. , Taiwan)

https://doi.org/10.7567/SSDM.2012.PS-4-1