Low Power and Highly Reliable Gadolinium Oxide Resistive Switching Memory with Remote NH3 Plasma Treatment

Y. R. Ye; J. C. Wnag; J. S. Syu; P.R. Wu; C. S. Lai; C. I. Wu; P. S. Wang

doi:https://doi.org/10.7567/SSDM.2012.PS-4-2

2012 International Conference on Solid State Devices and Materials

Sep 25, 2012 - Sep 27, 2012
Kyoto International Conference Center, Kyoto, Japan

[PS-4-2] Low Power and Highly Reliable Gadolinium Oxide Resistive Switching Memory with Remote NH3 Plasma Treatment

Y. R. Ye¹, J. C. Wnag¹, J. S. Syu¹, P.R. Wu¹, C. S. Lai¹, C. I. Wu^2,3, P. S. Wang³ (1.Univ.of Chang Gung, 2.Univ.of National Taiwan, 3.Univ.of National Taiwan , Taiwan)

https://doi.org/10.7567/SSDM.2012.PS-4-2

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