[PS-6-14] Normally-off recessed AlGaN/GaN MOSHFETs using ICPCVD SiO2

B. R. Park¹、J. G. Lee¹、I. H. Min²、K. S. Seo²、H. Y. Cha¹ (1.Hongik Univ.、2.Seoul National Univ. , Korea)

https://doi.org/10.7567/SSDM.2012.PS-6-14