[PS-6-22L] Nitrogen passivation and Chemical Trends of Defects at Al2O3:GaAs/InAs/InP/GaSb Interfaces

J. Robertson¹、Y. Guo¹、L. Lin¹ (1.Cambridge Univ. , UK)

https://doi.org/10.7567/SSDM.2012.PS-6-22L