[PS-6-6] AlGaN/GaN Schottky Barrier Diodes Employing TaN Schottky Contact

O. Seok¹、W. Ahn¹、Y. Kim¹、M. Ha²、M. Han¹ (1.Seoul Nat'l Univ.、2.Korea Electron. Tech. Inst. , Korea)

https://doi.org/10.7567/SSDM.2012.PS-6-6