[PS-6-6] AlGaN/GaN Schottky Barrier Diodes Employing TaN Schottky Contact

O. Seok¹, W. Ahn¹, Y. Kim¹, M. Ha², M. Han¹ (1.Seoul Nat'l Univ., 2.Korea Electron. Tech. Inst. , Korea)

https://doi.org/10.7567/SSDM.2012.PS-6-6