[PS-8-1] N-H Defect Formation Mechanism in GaAsN Grown by Chemical Beam Epitaxy

K. Ikeda¹、S. Wada¹、M. Inagaki¹、N. Kojima¹、Y. Ohshita¹、M. Yamaguchi¹ (1.Toyota Technological Inst. , Japan)

https://doi.org/10.7567/SSDM.2012.PS-8-1