[PS-8-1] N-H Defect Formation Mechanism in GaAsN Grown by Chemical Beam Epitaxy

K. Ikeda¹, S. Wada¹, M. Inagaki¹, N. Kojima¹, Y. Ohshita¹, M. Yamaguchi¹ (1.Toyota Technological Inst. , Japan)

https://doi.org/10.7567/SSDM.2012.PS-8-1