[A-1-5] A Gate-All-Around Floating-Gate Memory Device with Triangular-Shaped Poly-Si Nanowire Channels

K.H. Lee¹、H.C. Lin^1,2、T.Y. Huang¹ (1.National Chiao Tung Univ.、2.National Nano Device Labs. (Taiwan))

https://doi.org/10.7567/SSDM.2013.A-1-5