Carrier Injection Induced Switching of Supper-lattice GeTe/Sb2Te3 Phase Change Memories

S. Kato; M. Araidai; K. Kamiya; T. Yamamoto; K. Shiraishi; T. Ohyanagi; N. Takaura

doi:https://doi.org/10.7567/SSDM.2013.A-3-1

2013 International Conference on Solid State Devices and Materials

2013年9月24日〜 2013年9月27日
Hilton Fukuoka Sea Hawk, Fukuoka, Japan

[A-3-1] Carrier Injection Induced Switching of Supper-lattice GeTe/Sb2Te3 Phase Change Memories

S. Kato¹、M. Araidai¹、K. Kamiya¹、T. Yamamoto¹、K. Shiraishi¹、T. Ohyanagi²、N. Takaura² (1.Univ. of Tsukuba、2.Low-power Electronics Association & Project (Japan))

https://doi.org/10.7567/SSDM.2013.A-3-1

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