[A-4-3] Experimental Study of 3D Fin-Channel Charge Trapping Flash Memories with TiN Metal and Poly-Si Gates

Y.X. Liu¹, T. Matsukawa¹, K. Endo¹, S. O'uchi¹, J. Tsukada¹, H. Yamauchi¹, Y. Ishikawa¹, W. Mizubayashi¹, Y. Morita¹, S. Migita¹, H. Ota¹, M. Masahara¹ (1.AIST (Japan))

https://doi.org/10.7567/SSDM.2013.A-4-3