Experimental Study of 3D Fin-Channel Charge Trapping Flash Memories with TiN Metal and Poly-Si Gates

Y.X. Liu; T. Matsukawa; K. Endo; S. O'uchi; J. Tsukada; H. Yamauchi; Y. Ishikawa; W. Mizubayashi; Y. Morita; S. Migita; H. Ota; M. Masahara

doi:https://doi.org/10.7567/SSDM.2013.A-4-3

2013 International Conference on Solid State Devices and Materials

2013年9月24日〜 2013年9月27日
Hilton Fukuoka Sea Hawk, Fukuoka, Japan

[A-4-3] Experimental Study of 3D Fin-Channel Charge Trapping Flash Memories with TiN Metal and Poly-Si Gates

Y.X. Liu¹、T. Matsukawa¹、K. Endo¹、S. O'uchi¹、J. Tsukada¹、H. Yamauchi¹、Y. Ishikawa¹、W. Mizubayashi¹、Y. Morita¹、S. Migita¹、H. Ota¹、M. Masahara¹ (1.AIST (Japan))

https://doi.org/10.7567/SSDM.2013.A-4-3

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