The Japan Society of Applied Physics

[A-4-3] Experimental Study of 3D Fin-Channel Charge Trapping Flash Memories with TiN Metal and Poly-Si Gates

Y.X. Liu1, T. Matsukawa1, K. Endo1, S. O'uchi1, J. Tsukada1, H. Yamauchi1, Y. Ishikawa1, W. Mizubayashi1, Y. Morita1, S. Migita1, H. Ota1, M. Masahara1 (1.AIST (Japan))

https://doi.org/10.7567/SSDM.2013.A-4-3