[A-6-1] Modeling of Transition Metal Oxide Based RRAM Devices

J.F. Kang¹、B. Gao¹、B. Chen¹、P. Huang¹、X.Y. Liu¹ (1.Peking Univ. (China))

https://doi.org/10.7567/SSDM.2013.A-6-1