Conducting filament engineering by triple-layer RRAM for uniform resistive switching

D. Lee; J. Park; S. Park; J. Woo; E. Cha; S. Lee; Y. Koo; K. Moon; J. Song; H. Hwang

doi:https://doi.org/10.7567/SSDM.2013.A-6-2

2013 International Conference on Solid State Devices and Materials

2013年9月24日〜 2013年9月27日
Hilton Fukuoka Sea Hawk, Fukuoka, Japan

[A-6-2] Conducting filament engineering by triple-layer RRAM for uniform resistive switching

D. Lee¹、J. Park¹、S. Park²、J. Woo¹、E. Cha¹、S. Lee¹、Y. Koo¹、K. Moon¹、J. Song¹、H. Hwang¹ (1.Pohang Univ. of Sci. and Tech.、2.Gwangju Inst. of Sci. and Tech. (Korea))

https://doi.org/10.7567/SSDM.2013.A-6-2

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