Physics in Charge Injection Induced On-Off Switching Mechanism of Oxide-Based Resistive Random Access Memory (ReRAM) and Superlattice GeTe/Sb2Te3 Phase Change Memory (PCM)

K. Shiraishi; M.Y. Yang; S. Kato; M. Araidai; K. Kamiya; T. Yamamoto; T. Ohyanagi; N. Takaura; M. Niwa; B.M. Kope; Y. Nishi

doi:https://doi.org/10.7567/SSDM.2013.A-7-1

[A-7-1] Physics in Charge Injection Induced On-Off Switching Mechanism of Oxide-Based Resistive Random Access Memory (ReRAM) and Superlattice GeTe/Sb2Te3 Phase Change Memory (PCM)

K. Shiraishi^1,2, M.Y. Yang¹, S. Kato¹, M. Araidai³, K. Kamiya¹, T. Yamamoto¹, T. Ohyanagi⁴, N. Takaura⁴, M. Niwa⁵, B.M. Kope⁶, Y. Nishi⁶ (1.Univ. of Tsukuba, 2.Nagoya Univ., 3.Univ. of Tsukuba, 4.Low-power Electronics Association & Project, 5.Tohoku Univ., 6.Stanford Univ. (Japan))

https://doi.org/10.7567/SSDM.2013.A-7-1

2013 International Conference on Solid State Devices and Materials

[A-7-1] Physics in Charge Injection Induced On-Off Switching Mechanism of Oxide-Based Resistive Random Access Memory (ReRAM) and Superlattice GeTe/Sb2Te3 Phase Change Memory (PCM)