The Japan Society of Applied Physics

[A-7-1] Physics in Charge Injection Induced On-Off Switching Mechanism of Oxide-Based Resistive Random Access Memory (ReRAM) and Superlattice GeTe/Sb2Te3 Phase Change Memory (PCM)

K. Shiraishi1,2、M.Y. Yang1、S. Kato1、M. Araidai3、K. Kamiya1、T. Yamamoto1、T. Ohyanagi4、N. Takaura4、M. Niwa5、B.M. Kope6、Y. Nishi6 (1.Univ. of Tsukuba、2.Nagoya Univ.、3.Univ. of Tsukuba、4.Low-power Electronics Association & Project、5.Tohoku Univ.、6.Stanford Univ. (Japan))

https://doi.org/10.7567/SSDM.2013.A-7-1