Physics in Charge Injection Induced On-Off Switching Mechanism of Oxide-Based Resistive Random Access Memory (ReRAM) and Superlattice GeTe/Sb2Te3 Phase Change Memory (PCM)

K. Shiraishi; M.Y. Yang; S. Kato; M. Araidai; K. Kamiya; T. Yamamoto; T. Ohyanagi; N. Takaura; M. Niwa; B.M. Kope; Y. Nishi

doi:https://doi.org/10.7567/SSDM.2013.A-7-1

[A-7-1] Physics in Charge Injection Induced On-Off Switching Mechanism of Oxide-Based Resistive Random Access Memory (ReRAM) and Superlattice GeTe/Sb2Te3 Phase Change Memory (PCM)

K. Shiraishi^1,2、M.Y. Yang¹、S. Kato¹、M. Araidai³、K. Kamiya¹、T. Yamamoto¹、T. Ohyanagi⁴、N. Takaura⁴、M. Niwa⁵、B.M. Kope⁶、Y. Nishi⁶ (1.Univ. of Tsukuba、2.Nagoya Univ.、3.Univ. of Tsukuba、4.Low-power Electronics Association & Project、5.Tohoku Univ.、6.Stanford Univ. (Japan))

https://doi.org/10.7567/SSDM.2013.A-7-1

2013 International Conference on Solid State Devices and Materials

[A-7-1] Physics in Charge Injection Induced On-Off Switching Mechanism of Oxide-Based Resistive Random Access Memory (ReRAM) and Superlattice GeTe/Sb2Te3 Phase Change Memory (PCM)