The Japan Society of Applied Physics

[A-8-2] The Impact of Bending and Light Exposure on the Resistive Switching Characteristics of Transparent Flexible ITO/ZnO/ITO Resistive RAM (RRAM)

C.L. Lin1、Y.H. Yang1、C.M. Wu1、P.C. Juan2、C.H. Soh1、Y.L. Huang1、W.Y. Chang1 (1.Feng Chia Univ.、2.Mingchi Univ. of Tech. (Taiwan))

https://doi.org/10.7567/SSDM.2013.A-8-2