Impact of Additional Pt on Channel Stress Induced by NiSi Film Formation

M. Mizuo; T. Yamaguchi; S. Kudo; Y. Hirose; H. Kimura; J. Tsuchimoto; N. Hattori

doi:https://doi.org/10.7567/SSDM.2013.B-1-4

2013 International Conference on Solid State Devices and Materials

2013年9月24日〜 2013年9月27日
Hilton Fukuoka Sea Hawk, Fukuoka, Japan

[B-1-4] Impact of Additional Pt on Channel Stress Induced by NiSi Film Formation

M. Mizuo¹、T. Yamaguchi²、S. Kudo²、Y. Hirose^1,2、H. Kimura²、J. Tsuchimoto²、N. Hattori² (1.Renesas Semiconductor Engineering Corp.、2.Renesas Electronics Corp. (Japan))

https://doi.org/10.7567/SSDM.2013.B-1-4

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