Impact of Additional Pt on Channel Stress Induced by NiSi Film Formation

M. Mizuo; T. Yamaguchi; S. Kudo; Y. Hirose; H. Kimura; J. Tsuchimoto; N. Hattori

doi:https://doi.org/10.7567/SSDM.2013.B-1-4

2013 International Conference on Solid State Devices and Materials

Sep 24, 2013 - Sep 27, 2013
Hilton Fukuoka Sea Hawk, Fukuoka, Japan

[B-1-4] Impact of Additional Pt on Channel Stress Induced by NiSi Film Formation

M. Mizuo¹, T. Yamaguchi², S. Kudo², Y. Hirose^1,2, H. Kimura², J. Tsuchimoto², N. Hattori² (1.Renesas Semiconductor Engineering Corp., 2.Renesas Electronics Corp. (Japan))

https://doi.org/10.7567/SSDM.2013.B-1-4

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