The Japan Society of Applied Physics

[B-2-1] Low-temperature Microwave Annealing Process for Ge MOSFETs

Y.J. Lee1,6、S.S. Chuang2、C.I. Liu3、F.K. Hsueh1、P.J. Sung1、C.T Wu1、C.H. Lai4、Y.M. Wan3、M.I. Current5、T.Y. Tseng2 (1.National Nano Device Lab.、2.National Chiao Tung Univ.、3.I-Shou Univ.、4.Chung Hua Univ.、5.Current Scientific、6.National Chung Hsing Univ. (Taiwan))

https://doi.org/10.7567/SSDM.2013.B-2-1