[B-2-3] Formation of Epitaxial Nickel Monogermanide on Ge(100) by Annealing of Ni/Sn Bilayer

M. Koike¹、Y. Kamimuta¹、Y. Moriyama¹、Y. Kamata¹、E. Kurosawa¹、T. Tezuka¹ (1.AIST (Japan))

https://doi.org/10.7567/SSDM.2013.B-2-3