Size and Stress Effects in Ultraviolet Raman Spectra of Few-Nanometer-Thick SOI Nanofilms and Single Nanowires for Future CMOS Devices

V.D. Poborchii; T. Tada; Y. Morita; S. Migita; T. Kanayama; P. Geshev

doi:https://doi.org/10.7567/SSDM.2013.B-3-3

[B-3-3] Size and Stress Effects in Ultraviolet Raman Spectra of Few-Nanometer-Thick SOI Nanofilms and Single Nanowires for Future CMOS Devices

V.D. Poborchii¹、T. Tada¹、Y. Morita¹、S. Migita¹、T. Kanayama¹、P. Geshev² (1.National Institute of Advanced Industrial Science and Tech.、2.Inst. of Thermophysics of the Russian Academy of Sciences (Japan))

https://doi.org/10.7567/SSDM.2013.B-3-3

2013 International Conference on Solid State Devices and Materials

[B-3-3] Size and Stress Effects in Ultraviolet Raman Spectra of Few-Nanometer-Thick SOI Nanofilms and Single Nanowires for Future CMOS Devices