Detection of oxidation-induced compressive stress in Si(100) substrate near the SiO<sub>2</sub>/Si interface with atomic-scale resolution

T. Suwa; K. Nagata; H. Nohira; K. Nakajima; A. Teramoto; A. Ogura; K. Kimura; T. Muro; T. Kinoshita; S. Sugawa; T. Hattori; T. Ohmi

doi:https://doi.org/10.7567/SSDM.2013.B-4-1

[B-4-1] Detection of oxidation-induced compressive stress in Si(100) substrate near the SiO₂/Si interface with atomic-scale resolution

T. Suwa¹, K. Nagata², H. Nohira³, K. Nakajima⁴, A. Teramoto¹, A. Ogura², K. Kimura⁴, T. Muro⁵, T. Kinoshita⁵, S. Sugawa¹, T. Hattori¹, T. Ohmi¹ (1.Tohoku Univ., 2.Meiji Univ., 3.Tokyo City Univ., 4.Kyoto Univ., 5.JASRI (Japan))

https://doi.org/10.7567/SSDM.2013.B-4-1

2013 International Conference on Solid State Devices and Materials

[B-4-1] Detection of oxidation-induced compressive stress in Si(100) substrate near the SiO2/Si interface with atomic-scale resolution

[B-4-1] Detection of oxidation-induced compressive stress in Si(100) substrate near the SiO₂/Si interface with atomic-scale resolution