[B-4-2] Layer-by-Layer GeO2 Formation in the Self-Limited Oxidation Regime of Ge C.H. Lee1,2、T. Nishimura1,2、T. Tabata1,2、K. Nagashio1,2、A. Toriumi1,2 (1.Univ. of Tokyo、2.JST-CREST (Japan)) https://doi.org/10.7567/SSDM.2013.B-4-2