[B-6-2] Electrical Characteristics of Ge/Si Hetero-Junction Tunnel Field-Effect Transistors and their Post Annealing Effects

M. Kim¹, Y. Wakabayashi¹, R. Nakane¹, M. Yokoyama¹, M. Takenaka¹, S. Takagi¹ (1.The Univ. of Tokyo (Japan))

https://doi.org/10.7567/SSDM.2013.B-6-2