[B-6-2] Electrical Characteristics of Ge/Si Hetero-Junction Tunnel Field-Effect Transistors and their Post Annealing Effects

M. Kim¹、Y. Wakabayashi¹、R. Nakane¹、M. Yokoyama¹、M. Takenaka¹、S. Takagi¹ (1.The Univ. of Tokyo (Japan))

https://doi.org/10.7567/SSDM.2013.B-6-2