[B-6-3] Demonstration of High Electron Mobility in Germanium n-channel Junctionless FETs

S. Kabuyanagi^1,2、T. Nishimura^1,2、K. Nagashio^1,2、A. Toriumi^1,2 (1.The University of Tokyo、2.JST-CREST (Japan))

https://doi.org/10.7567/SSDM.2013.B-6-3