The Japan Society of Applied Physics

[B-6-4] Very Low EOT and High Mobility Ge pMOSFETs by ALD-formed HfON and in-situ H2O Plasma Grown GeO2

L.J. Liu1、K.S. Chang Liao1、C.H. Fu1、T.C. Chen1、C.C. Li1、J.W. Cheng1、C.C. Lu1、T.M. Lee1、L.T. Chen1、S.H. Yi1、S.K. Chen1、T.K. Wang1 (1.National Tsing Hua University (Taiwan))

https://doi.org/10.7567/SSDM.2013.B-6-4