Very Low EOT and High Mobility Ge pMOSFETs by ALD-formed HfON and in-situ H<sub>2</sub>O Plasma Grown GeO<sub>2</sub>

L.J. Liu; K.S. Chang Liao; C.H. Fu; T.C. Chen; C.C. Li; J.W. Cheng; C.C. Lu; T.M. Lee; L.T. Chen; S.H. Yi; S.K. Chen; T.K. Wang

doi:https://doi.org/10.7567/SSDM.2013.B-6-4

[B-6-4] Very Low EOT and High Mobility Ge pMOSFETs by ALD-formed HfON and in-situ H₂O Plasma Grown GeO₂

L.J. Liu¹、K.S. Chang Liao¹、C.H. Fu¹、T.C. Chen¹、C.C. Li¹、J.W. Cheng¹、C.C. Lu¹、T.M. Lee¹、L.T. Chen¹、S.H. Yi¹、S.K. Chen¹、T.K. Wang¹ (1.National Tsing Hua University (Taiwan))

https://doi.org/10.7567/SSDM.2013.B-6-4

2013 International Conference on Solid State Devices and Materials

[B-6-4] Very Low EOT and High Mobility Ge pMOSFETs by ALD-formed HfON and in-situ H2O Plasma Grown GeO2

[B-6-4] Very Low EOT and High Mobility Ge pMOSFETs by ALD-formed HfON and in-situ H₂O Plasma Grown GeO₂