The Japan Society of Applied Physics

[C-6-2] Reliability Characteristics of MoS2 FETs

W. Park1、Y.G. Lee1、J.J Kim2、S.K. Lee1、C.G. Kang1、C. Cho2、S.K. Lim2、U. Jung1、W.K. Hong3、B.H. Lee1,2 (1.Gwangju Inst. of Sci. and Tech.、2.Gwangju Inst. of Sci. and Tech.、3.Korea Basic Sci. Inst. (Korea))

https://doi.org/10.7567/SSDM.2013.C-6-2