Carrier Mobility on (100), (110), and (551) Oriented Atomically Flattened Si Surfaces for Multi-gate MOSFETs Device Design

R. Kuroda; Y. Nakao; A. Teramoto; S. Sugawa; T. Ohmi

doi:https://doi.org/10.7567/SSDM.2013.D-1-5

[D-1-5] Carrier Mobility on (100), (110), and (551) Oriented Atomically Flattened Si Surfaces for Multi-gate MOSFETs Device Design

R. Kuroda¹、Y. Nakao¹、A. Teramoto²、S. Sugawa^1,2、T. Ohmi² (1.Graduate School of Engineering, Tohoku Univ.、2.New Industry Creation Hatchery Center, Tohoku Univ. (Japan))

https://doi.org/10.7567/SSDM.2013.D-1-5

2013 International Conference on Solid State Devices and Materials

[D-1-5] Carrier Mobility on (100), (110), and (551) Oriented Atomically Flattened Si Surfaces for Multi-gate MOSFETs Device Design