[D-1-5] Carrier Mobility on (100), (110), and (551) Oriented Atomically Flattened Si Surfaces for Multi-gate MOSFETs Device Design

R. Kuroda¹, Y. Nakao¹, A. Teramoto², S. Sugawa^1,2, T. Ohmi² (1.Graduate School of Engineering, Tohoku Univ., 2.New Industry Creation Hatchery Center, Tohoku Univ. (Japan))

https://doi.org/10.7567/SSDM.2013.D-1-5