[D-4-4] A method to determine the lateral trap position in ultra-scaled MOSFETs

Y.Y. Illarionov^1,2, S.E. Tyaginov^1,2, M. Bina¹, T. Grasser¹ (1.Inst. for Microelectronics, TU Vienna, 2.Ioffe Physical-Technical Inst. (Austria))

https://doi.org/10.7567/SSDM.2013.D-4-4