[D-4-4] A method to determine the lateral trap position in ultra-scaled MOSFETs

Y.Y. Illarionov^1,2、S.E. Tyaginov^1,2、M. Bina¹、T. Grasser¹ (1.Inst. for Microelectronics, TU Vienna、2.Ioffe Physical-Technical Inst. (Austria))

https://doi.org/10.7567/SSDM.2013.D-4-4