[D-5-1] Experimental proof of direct correlation between hydrogen migrated to SiO₂/Si interface and MOSFET characteristics using high energy ¹⁵N²⁺ ion beam

M. Suzuki¹、R. Takaishi¹、Y. Higashi¹、M. Tomita¹、Y. Mitani¹、M. Matsumoto²、K. Fukutani² (1.Toshiba Corp.、2.Univ. of Tokyo (Japan))

https://doi.org/10.7567/SSDM.2013.D-5-1