Experimental proof of direct correlation between hydrogen migrated to SiO2/Si interface and MOSFET characteristics using high energy 15N2+ ion beam

[D-5-1] Experimental proof of direct correlation between hydrogen migrated to SiO₂/Si interface and MOSFET characteristics using high energy ¹⁵N²⁺ ion beam

M. Suzuki¹, R. Takaishi¹, Y. Higashi¹, M. Tomita¹, Y. Mitani¹, M. Matsumoto², K. Fukutani² (1.Toshiba Corp., 2.Univ. of Tokyo (Japan))