[D-6-3] Influence of work function variation in a metal gate on fluctuation of current-onset voltage for undoped-channel FinFETs

T. Matsukawa¹, Y.X. Liu¹, K. Endo¹, J. Tsukada¹, H. Yamauchi¹, Y. Ishikawa¹, S. O'uchi¹, W. Mizubayashi¹, H. Ota¹, S. Migita¹, Y. Morita¹, M. Masahara¹ (1.AIST (Japan))

https://doi.org/10.7567/SSDM.2013.D-6-3