[D-6-5L] Sb-diffused Source/Drain Ultra-thin Body Ge-On Insulator nMOSFETs Fabricated by Ge Condensation

W.K. Kim¹, Y. Kin¹, Y.H. Kim¹, S.H. Kim¹, T. Osada², M. Hata², M. Takenka¹, S. Takagi¹ (1.Univ. of Tokyo, 2.Sumitomo Chemical Co. Ltd. (Japan))

https://doi.org/10.7567/SSDM.2013.D-6-5L