[D-7-3] Dependence of The Carrier Concentration in InGaAs/InP Superlattice-based FETs with a Steep Subthreshold Slope

M. Kashiwano¹、A. Yukimachi¹、Y. Miyamoto¹ (1.Tokyo Tech. (Japan))

https://doi.org/10.7567/SSDM.2013.D-7-3