Reduction of Charge Noise in Dual-Gate Si/SiGe Quantum Point Contact

J. Kamioka; T. Kodera; T. Obata; K. Takeda; W.M. Akhtar; S. Tarucha; S. Oda

doi:https://doi.org/10.7567/SSDM.2013.E-2-5

2013 International Conference on Solid State Devices and Materials

Sep 24, 2013 - Sep 27, 2013
Hilton Fukuoka Sea Hawk, Fukuoka, Japan

[E-2-5] Reduction of Charge Noise in Dual-Gate Si/SiGe Quantum Point Contact

J. Kamioka¹, T. Kodera^1,2,3, T. Obata², K. Takeda², W.M. Akhtar², S. Tarucha^2,4, S. Oda¹ (1.Tokyo Tech., 2.Univ. of Tokyo, 3.PRESTO-JST, 4.RIKEN (Japan))

https://doi.org/10.7567/SSDM.2013.E-2-5

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