[E-3-4] Phase-change non-volatile memory equipped with topological insulating properties -Fusion of PCRAM and spintronics-

J. Tominaga¹, A. Kolobov¹, P. Fons¹, T. Nakano¹, M. Hase², S. Murakami³ (1.AIST, 2.Univ. of Tsukuba, 3.Tokyo Inst. of Tech. (Japan))

https://doi.org/10.7567/SSDM.2013.E-3-4