[E-3-4] Phase-change non-volatile memory equipped with topological insulating properties -Fusion of PCRAM and spintronics-

J. Tominaga¹、A. Kolobov¹、P. Fons¹、T. Nakano¹、M. Hase²、S. Murakami³ (1.AIST、2.Univ. of Tsukuba、3.Tokyo Inst. of Tech. (Japan))

https://doi.org/10.7567/SSDM.2013.E-3-4