The Japan Society of Applied Physics

[E-5-4] Dopant-Atom-based SOI-Transistors by Selective Nanoscale Doping

A. Samanta1、D. Moraru1、Y. Kuzuya1、K. Tyszka1,2、L.T. Anh3、T. Mizuno1、R. Jablonski2、H. Mizuta3,4、M. Tabe1 (1.Shizuoka Univ.、2.Warsaw Univ. of Tech.、3.Japan Advanced Inst. of Sci. and Tech.、4.Univ. of Southampton (Japan))

https://doi.org/10.7567/SSDM.2013.E-5-4