[F-2-3] Origin of Anisotropy of Spin Accumulation Induced by Tunneling in Si and Ge

A. Spiesser¹, S. Sharma^1,2, H. Saito¹, S. Yuasa¹, B.J. van Wees², R. Jansen¹ (1.Spintronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), 2.Zernike Institute for Advanced Materials, Physics of Nanodevices, University of Groningen (Japan))

https://doi.org/10.7567/SSDM.2013.F-2-3